[PLUS] Tuning Guide: Optimizing Subtimings of DDR5 RAM

Timing is everything in modern single-seater motorsport: Even thousandths of a second, which a driver needs less for a circuit several kilometers long due to better coordination, can decide on a better starting position in time trials. Record times of less than 1.9 seconds for pit stops, where the mechanics change all four wheels, are only possible through intensive training and perfect coordination. Unfortunately, grandstands cannot be filled with enthusiastic fans with what happens inside a RAM module, but without the perfect interlocking of the most diverse work steps, stable, let alone particularly fast operation would not be possible.

beat and timing

All these work steps are described by so-called RAM timings. These define in great detail the time frames in which read, write and refresh processes (must) take place. The four most famous, viz

• Column Address Strobe (tCAS, also CAS Latency/CL),
• Row Address to Column Address Delay (tRCD),
• Row Precharge Time (tRP) and
• Row Active Time (tRAS)

most manufacturers specify for their RAM modules in this order, e.g. e.g. 32-39-39-76. However, these four parameters are only a fraction of the timings that are relevant for the operation of a memory module. In this article, we look at the influence of the numerous other timings on DDR5 RAM and what their optimization causes.

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