Samsung presents plans for semiconductor mass production in 2 and 1.4 nanometers

As part of its annual “Samsung Foundry Forum” event, the company has given a new outlook on its plans in the field of semiconductor technology. According to this, the mass production of 2 nm process technology is aimed for by 2025 and 1.4 nm structure width by 2027. In the middle of this year Samsung had started the first 3 nm production with GAA transistors.

In addition, the production capacity for the advanced nodes is to be increased by more than three times by 2027, while “non-mobile applications” (apart from smartphones and Co.), including high-performance computing (HPC) and automotive applications, by 2027 more than 50 percent of its own foundry portfolio. In addition, one wants to increase its customer service capacities beyond its own partner ecosystem.

“With significant market growth in high-performance computing (HPC), artificial intelligence (AI), 5/6G connectivity and automotive applications, the demand for advanced semiconductors has increased dramatically, making innovation in semiconductor process technology critical to foundry business success. Customers are crucial,” it says in the announcement.

Samsung: Also improve existing processes

In addition to the major manufacturing steps, the development of the heterogeneous 2.5D/3D integration technology is also to be promoted “in order to offer a complete system solution for foundry services”. In the field of stacking chips (stacking), 3D packaging using X-Cube technology via so-called microbump connections should be ready for mass production in 2024, and X-Cube without bump in 2026. In addition, the GAA-based 3-nm -Process support for HPC and mobile will be improved, while the 4nm process will also be “further diversified” for HPC and automotive applications.

Source: via computerbase.de